Full papers

2017
3 T. Shirafuji, Y. Nakamura, S. Azuma, N. Sotoda, and T. Isshiki: Au-nanoparticle-embedded cross-linked gelatin ?lms synthesized on aqueous solution in contact with dielectric barrier discharge, Jpn. J. Appl. Phys. 57, 0102BE (8pp) (2018).
DOI 10.7567/JJAP.57.0102BE
2 S. Imai, Y. Sakaguchi, and T. Shirafuji: Simultaneous generation of acidic and alkaline water using atmospheric air plasma formed in water, Jpn. J. Appl. Phys. 57, 0102BC (6pp) (2018).
DOI 10.7567/JJAP.57.0102BC
1 T. Shirafuji, Y. Ishida, A. Nomura, Y. Hayashi, and M. Goto: Reaction mechanisms of methylene-blue degradation in three-dimensionally integrated micro-solution plasma, Jpn. J. Appl. Phys. 56 (6S2), 06HF02 (6pp) (2017).
DOI 10.7567/JJAP.56.06HF02
2016
1 T. Shirafuji, M. Iwamura, R. Taga, Y. Kashiwagi, K. Nakajima, Y. Ogata, K. Tanaka, A. Tachibana, and T. Tanabe: Acquisition of cell-adhesion capability of the surface of crosslinked albumin films irradiated with atmospheric-pressure plasma jets, Jpn. J. Appl. Phys., 55, 07LG03 (5pp) (2016).
DOI 10.7567/JJAP.55.07LG03
2015
1 T. Shirafuji, A. Nomura, Y. Hayashi, K. Tanaka, and M. Goto: Matrix-assisted laser desorption ionization time-of-flight mass spectrometric analysis of degradation products after treatment of methylene blue aqueous solution with three-dimensinonally integrated microsolution plasma, Jpn. J. Appl. Phys., 55, 01AH02 (5pp) (2016).
DOI 10.7567/JJAP.55.01AH02
2014
7 T. Shirafuji and T. Murakami: On the contribution of electrons, Ar(3P0,2), H2O+, and H3O+ to production of OH(A2+) in a micro dielectric barrier discharge of Ar/H2O., Jpn. J. Appl. Phys. 54, 01AC03 (2015) (5pp).
DOI: 10.7567/JJAP.54.01AC03
6 A. Nomura, Y. Himeno, K. Tanaka, and T. Shirafuji: 3D Integrated micro-solution plasma for the treatment of water - Effects of discharge gases -., Plasma Phys. Technol., 1, 147-149 (2014).
http://fyzika.feld.cvut.cz/misc/ppt/index.html
5 Y. Himeno, Y. Ogura, and T. Shirafuji: Time-resolved optical emission spectroscopy on three-dimensionally integrated micro solution plasma in He/H2O mixture, J. Phys. Conf. Ser.., 518, 021021 (6pp).
DOI:10.1088/1742-6596/518/1/012021
4 T. Shirafuji, A. Nomura and Y. Himeno: Three-dimensionally integrated micro solution plasmas: Numerical feasibility study and practical applications, Plasma Chem. Plasma Process., 34, 523-534 (2014).
DOI: 10.1007/s11090-014-9544-2
3 T. Shirafuji, A. Nakamura and F. Tochikubo: Numerical simulation of electric double layer in contact with dielectric barrier discharge, JPS Conf. Proc., 1, 015058 (4pp) (2014).
DOI: 10.7566/JPSCP.1.015058
2 T. Shirafuji, A. Nakamura and F. Tochikubo: Numerical simulation of electric double layer in contact with dielectric barrier discharge -Effects of ion transport parameters in liquid -, Jpn. J. Appl. Phys., 53, 03DG04 (6pp) (2014).
DOI: 10.7567/JJAP.53.03DG04
1 T. Shirafuji, Y. Ogura and Y. Himeno: Time-resolved optical emission spectroscopy on three-dimensionally integrated micro-solution plasmas, Jpn. J. Appl. Phys., 53, 010211 (6pp) (2014).
DOI: 10.7567/JJAP.53.010211
2013
5 T. Shirafuji, J. Ueda, A. Nakamura, S. -P. Cho, N. Saito and O. Takai: Gold nanoparticles synthesis by using three-dimensionally integrated micro-solution plasmas, Jpn. J. Appl. Phys., 52, 126202 (5pp) (2013).
DOI: 10.7567/JJAP.52.126202
4 T. Shirafuji and Y. Himeno: Generation of three-dimensionally integrated micro-solution plasmas and its application to decomposition of methylene blue molecules in water, Jpn. J. Appl. Phys., 52, 11NE03 (5pp) (2013).
DOI: 10.7567/JJAP.52.11NE03
3 T. Shirafuji, Y. Noguchi, T. Yamamoto, J. Hieda, N. Saito, O. Takai, A. Tsuchimoto, K. Nojima and Y. Okabe: Functionalization of multiwalled carbon nanotubes by solution plasma processing in ammonia aqueous solution and preparation of composite material with polyamide 6, Jpn. J. Appl. Phys., 52, 125101 (6pp) (2013).
DOI: 10.7567/JJAP.52.125101
2 T. Shirafuji, Y. Himeno, N. Saito and O. Takai: Decomposition of methylene blue molecules in aqueous solution by using three-dimensionally integrated micro solution plasmas and improvement of its energy efficiency, J. Photopolym. Sci. Technol., 26, 507-511 (2013).
DOI: 10.2494/photopolymer.26.507
1 T. Shirafuji and A. Nakamura: Numerical investigation of electric field in gas bubbles surrounded with conductive liquid and dielectric material, Trans. Mater. Res. Soc. Jpn., 38, 321-323 (2013).
DOI: 10.14723/tmrsj.38.321
2012
2011
5 S.-M. Baek, T. Shirafuji, N. Saito and O. Takai: Fabrication of transparent protective diamond-like carbon films on polymer, Jpn. J. Appl. Phys., 50, 08JD08 (5pp) (2011).
DOI: 10.1143/JJAP.50.08JD08
4 S.-M. Baek, T. Shirafuji, N. Saito and O. Takai: Adhesion property of SiOx-doped diamond-like carbon films deposited on polycarbonate by inductively coupled plasma chemical vapor deposition, Thin Solid Films, 519, 6678-6682 (2011).
DOI: 10.1016/j.tsf.2011.04.080
3 S. N. Abolmasov, K. Tachibana and T. Shirafuji: Mechanisms of pattern formation in dielectric barrier discharges, IEEE Trans. Plasma Sci., 39, 2090-2091 (2011).
DOI: 10.1109/TPS.2011.2160362
2 K. Denpoh and T. Shirafuji: Modification of semianalytical finite element model for radio frequency sheaths in single- and dual-frequency capacitively coupled plasmas:II. Effects of nonuniform bulk plasma density and charging at dielectric surface, Jpn. J. Appl. Phys., 50, 036001 (6pp) (2011).
DOI: 10.1143/JJAP.50.036001
1 C. Terashima, K. Arihara, S. Okazaki S, T. Shichi, D. A. Tryk, T. Shirafuji, N. Saito, O. Takai and A. Fujishima: Fabrication of vertically aligned diamond whiskers from highly boron-doped diamond by oxygen plasma etching, ACS Appl. Mater. Interfaces, 3, 177-182 (2011).
DOI: 10.1021/am1007722
2010
4 T. Shirafuji, J. Hieda, O. Takai, N. Saito, T. Morita, O. Sakai and K. Tachibana: FTIR study of methylene blue plasma degradation products through plasma treatment on water, Proc. 2010 IEEE Region 10 Conf., TenCon2010, 1938-1942 (2010).
DOI: 10.1109/TENCON.2010.5686449
3 S.-M. Baek, T. Shirafuji, S.-P. Cho, N. Saito and O. Takai: Oxygen gas barrier properties of hydrogenated amorphous carbon thin films deposited with a pulse-biased inductively coupled plasma chemical vapor deposition method, Jpn. J. Appl. Phys., 49, 08JF10 (6pp) (2010).
DOI: 10.1143/JJAP.49.08JF10
2 K. Denpoh and T. Shirafuji: Modification of semianalytical finite element model for radio frequency sheaths in single- and dual-frequency capacitively coupled plasmas: Incorporating ion density oscillation at low frequency, Jpn. J. Appl. Phys., 49, 056202 (4pp) (2010).
DOI: 10.1143/JJAP.49.056202
1 K. Tachibana and T. Shirafuji: Generation of plasmas in multiphase medium, Trans. Mater. Res. Soc. Jpn., 35, 81-83 (2010).
DOI: 10.14723/tmrsj.35.81
2009
4 J. Hieda, T. Shirafuji, Y. Noguchi, N. Saito and O. Takai: Solution plasma surface modification for nanocarbon-composite materials, J. Jpn. Inst. Metals, 73, 938-942 (2009).
DOI: 10.2320/jinstmet.73.938
3 K. Denpoh and T. Shirafuji: Semianalytical finite element method model for radio frequency sheaths in single- and dual-frequency capacitively coupled plasmas, Jpn. J. Appl. Phys., 48, 090209 (3pp) (2009).
DOI: 10.1143/JJAP.48.090209
2 O. Sakai, T. Morita, N. Sano, T. Shirafuji, T. Nozaki and K. Tachibana: Reduction of CO2 solute by hydrogen microplasmas in an electrolyte, J. Phys. D: Appl. Phys., 42, 202004 (4pp) (2009).
DOI: 10.1088/0022-3727/42/20/202004
1 T. Shirafuji, Y. Nishimura, K. Tachibana and H. Ishii: Plasma enhanced chemical vapor deposition of carbon films using dibromoadamantane, Thin Solid Films, 518, 993-1000 (2009).
DOI: 10.1016/j.tsf.2009.07.170
2008
1 O. Sakai, M. Kimura, T. Shirafuji and K. Tachibana: Underwater microdischarge in arranged microbubbles produced by electrolysis in electrolyte solution using fabric-type electrode, Appl. Phys. Lett., 93, 231501 (3pp) (2008).
DOI: 10.1063/1.3006348
2007
1 T. Shirafuji, Y Nishimura and K. Tachibana: Plasma polymerization of fluorocarbon thin films on high temperature substrate and its application to low-k films, Thin Solid Films, 515, 4111-4115 (2007).
DOI: 10.1016/j.tsf.2006.02.051
2006
1 S. N. Abolmasov, R. Abo, T. Shirafuji and K. Tachibana: Spatiotemporal surface charge measurement in two types of dielectric barrier discharges using Pockels effect, Jpn. J. Appl. Phys., 45, 8255-8259 (2006).
DOI: 10.1143/JJAP.45.8255
2005
2 T. Somekawa, T. Shirafuji, O. Sakai, K. Tachibana and K. Matsunaga: Effects of self-erasing discharge on the uniformity of dielectric barrier discharge, J. Phys. D. Appl. Phys., 38, 1910-1917 (2005).
DOI: 10.1088/0022-3727/38/12/010
1 S. N. Abolmasov, T. Shirafuji and K. Tachibana: Submillimeter dielectric barrier discharges at atmospheric pressure: edge effect, IEEE Trans. Plasma Sci., 33, 941-948 (2005).
DOI: 10.1109/TPS.2005.845093
2004
2 T. Shirafuji, H. Motomura, H. J. Lee, K. Tachibana, S. Imai, W. W. Stoffels and G. M. W. Kroesen: Fourier-transform infrared phase-modulated ellipsometry for in situ diagnostics of plasma-surface interactions, J. Phys. D. Appl. Phys., 37, R49-R73 (2004).
DOI: 10.1088/0022-3727/37/6/R01
1 T. Shirafuji, A. Tsuchino, T. Nakamura and K. Tachibana: Plasma copolymerization of C6F6/C5F8 for application of low-dielectric-constant fluorinated amorphous carbon films and its gas-phase diagnostics using in situ Fourier transform infrared spectroscopy, Jpn. J. Appl. Phys., 43, 2697-2703 (2004).
DOI: 10.1143/JJAP.43.2697
2003
3 T. Shirafuji, T. Kitagawa, T. Wakai and K. Tachibana: Observation of self-organized filaments in a dielectric barrier discharge of Ar gas, Appl. Phys. Lett., 83, 2309-2311 (2003).
DOI: 10.1063/1.1613796
2 T. Shirafuji, T. Wada, M. Kashiwagi, T. Nakamura and K. Tachibana: Plasma enhanced chemical vapor deposition of fluorinated amorphous carbon films on the surface with reverse tapered microstructures, Jpn. J. Appl. Phys., 42, 4504-4509 (2003).
DOI: 10.1143/JJAP.42.4504
1 F. Fracassi, R. d'Agostino, A. Fornelli, F. Illuzzi and T. Shirafuji: SiO2 etching with perfluorobutadiene in a dual frequency plasma reactor, J. Vac. Sci. Technol. A, 21, 638-642 (2003).
DOI: 10.1116/1.1564025
2002
2 F. Fracassi, R. d'Agostino, A. Fornelli and T. Shirafuji: Dry etching of SiO2 thin films with perfluoropropenoxide-O2 and perfluoropropene-O2 plasmas, Jpn. J. Appl. Phys., 41, 6287-6290 (2002).
DOI: 10.1143/JJAP.41.6287
1 Y. Maeyama, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki and T. Shirafuji: Improvement of SiO2/alpha-SiC interface properties by nitrogen radical treatment, Silicon Carbide and Related Materials 2001, Pts 1 and 2, Materials Science Forum, 389-3, 997-1000 (2002).
ISBN:0-87849-894-X, ISSN: 0255-5476
2001
2000
3 T. Shirafuji, Y. Hayashi and S. Nishino: Plasma CVD of low-k a-C:F films using substitutional PFC, Advanced Metallization Conference 1999, Mater. Res. Soc. Symp. Proc., ULSI XV, 425-430 (2000).
ISBN 1558995390
2 T. Shirafuji, A. Kamisawa, T. Shimasaki, Y. Hayashi and S. Nishino: Plasma enhanced chemical vapor deposition of thermally stable and low-dielectric constant fluorinated amorphous carbon films using a low global-warming potential gas of C5F8, Thin Solid Films, 374, 256-261 (2000).
DOI: 10.1016/S0040-6090(00)01159-7
1 Y. Chen, Y. Masuda, C. Jacob, T. Shirafuji and S. Nishino: Improvement of 3C-SiC surface morphology on Si(100) by adding HCl using atmospheric CVD, Mater. Sci. Forum, 338-342, 257-260 (2000).
DOI: 10.4028/www.scientific.net/MSF.338-342.257
1999
4 Y. Chen, K. Matsumoto, Y. Nishio, T. Shirafuji and S. Nishino: Heteroepitaxial Growth of 3C-SiC using HMDS by Atmospheric CVD, Mater. Sci. Eng. B, Solid-state Mater. Adv. Technol., B61-B62, 579-582 (1999).
DOI: 10.1016/S0921-5107(98)00478-4
3 T, Shirafuji, Y. Miyazaki, Y. Hayashi and S. Nishino: PE-CVD of fluorocarbon / SiO composite thin films using C4F8 and HMDSO, Plasmas and Polym., 4 (1), 57-75 (1999).
DOI: 10.1023/A:1021803615715
2 T. Shirafuji, Y. Miyazaki, Y. Nakagami, Y. Hayashi and S. Nishino: Plasma copolymerization of tetrafluoroethylene / hexamethyldisiloxane and in situ Fourier transform infrared spectroscopy of its gas phase, Jpn. J. Appl. Phys., 38 (7B), 4520-4526 (1999).
DOI: 10.1143/JJAP.38.4520
1 T. Shirafuji, Y. Hayashi and S. Nishino: PE-CVD of fluorocarbon / silicon oxide composite thin films from TFE and HMDSO, Plasma Deposition and Treatment of Polymers, Mater. Res. Soc. Symp. Proc., 554, 173-178 (1999).
ISSN/ISBN 0272-9172 / 1-55899-450-5
1998
2 T. Shirafuji, Y. Nakagami, Y. Hayashi and S. Nishino: Plasma enhanced chemical vapor deposition of fluorinated amorphous carbon thin films from tetrafluoroethylene and tetraisocyanatesilane, Plasmas and Polym., 3 (2), 115-127 (1998).
DOI: 10.1023/B:PAPO.0000005942.82289.25
1 G. M. W. Kroesen, H-J. Lee, H. Moriguchi, H. Motomura, T. Shirafuji and K. Tachibana: Investigations of the surface chemistry of silicon substrates etched in a RF-biased inductively coupled fluorocarbon plasma using Fourier-transform infrared ellipsometry, J. Vac. Sci. Technol. A, 16 (1), 225-232 (1998).
DOI: 10.1116/1.580976
1997
4 X. Li, T. Shirafuji, S. K. Lilov, S. Nishino: Diamond nucleation on single-crystalline 6H-SiC substrates by bias-enhanced nucleation in hot filament chemical vapor deposition, Jpn. J. Appl. Phys., 36 (10), 6295-6299 (1997).
DOI: 10.1143/JJAP.36.6295
3 T. Shirafuji, M. Sawada, Y. Nakagami, Y. Hayashi and S. Nishino: PE-CVD of F-doped SiO2 thin films using tetraisocyanatesilane and tetrafluorosilane, Low-dielectric Constant Materials II, Mater. Res. Soc. Symp. Proc., 443, 137-142 (1997).
2 M. Sawada, Y. Nakagami, T. Shirafuji, Y. Hayashi and S. Nishino: Preparation of stable F-doped SiO2 thin films from Si(NCO)4/SiF4/O2 gas mixtures using a conventional capacitively coupled RF plasma source, Jpn. J. Appl. Phys., 36 (7B), 4911-4916 (1997).
DOI:10.1143/JJAP.36.4911
1 T. Shirafuji, W. W. Stoffels, H. Moriguchi and K. Tachibana: Silicon surfaces treated by CF4, CF4/H2 and CF4/O2 RF plasmas: study by in situ Fourier transform infrared ellipsometry, J. Vac. Sci. Technol. A, 15 (2), 209-215 (1997).
DOI:10.1116/1.580514
1996
2 K. Tachibana, T. Shirafuji and S. Muraishi: Construction and performance of a Fourier transform infrared phase-modulated ellipsometer for in-process surface diagnostics, Jpn. J. Appl. Phys., 35 (6A), 3652-3657 (1996).
DOI:10.1143/JJAP.35.3652
1 T. Shirafuji, H. Kondo and K. Tachibana: Thickness dependence of H radical treatment of Si thin films deposited by plasma enhanced chemical vapor deposition using SiF4/SiH4/H2 gases, Jpn. J. Appl. Phys., 35 (4A), 2047-2051 (1996).
DOI:10.1143/JJAP.35.2047
1995
1 T. Shirafuji, K. Tachibana and Y. Matsui: Measurement and calculation of SiH2 radical density in SiH4 and Si2H6 plasma for the deposition of hydrogenated amorphous silicon thin films, Jpn. J. Appl. Phys., 34 (8A), 4239-4246 (1995).
DOI:10.1143/JJAP.34.4239
1994
3 T. Shirafuji, Y. Hayashi and K. Tachibana: In situ ellipsometric monitoring of low temperature growth of poly-Si films by RF plasma CVD, Amorphous Silicon Technology - 1994, Mater. Res. Soc. Symp. Proc., 336, 73-78 (1994).
2 T. Shirafuji and K. Tachibana: Photo-excited removal of native oxide on a silicon wafer in NF3 gas using a VUV Xe lamp, Appl. Surf. Sci., 79-80, 117-121 (1994).
DOI:10.1016/0169-4332(94)90398-0
1 K. Tachibana, T. Shirafuji, Y. Hayashi, S. Maekawa and T. Morita: In situ ellipsometric monitoring of the growth of polycrystalline silicon thin films by RF plasma chemical vapor deposition, Jpn. J. Appl. Phys., 33 (7B), 4191-4194 (1994).
doi:10.1143/JJAP.33.4191
1993
2 T. Shirafuji, S. Nakajima, Y-F. Wang, T. Genji and K. Tachibana: Direct photochemical vapor deposition of hydrogenated amorphous silicon - effects of excitation wavelengths and source gases -, Jpn. J. Appl. Phys., 32 (4), 1546-1557 (1993).
doi:10.1143/JJAP.32.1546
1 T. Shirafuji, W-M. Chen, M. Yamamuka and K. Tachibana: Monte-Carlo simulation of surface reactions in plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon thin films, Jpn. J. Appl. Phys., 32 (11A), 4946-4947 (1993).
doi:10.1143/JJAP.32.4946
1992
1 K. Tachibana, T. Shirafuji and Y. Matsui: Measurement of SiH2 radical densities in an RF-discharge silane plasma used in the chemical vapor deposition of hydrogenated amorphous silicon film, Jpn. J. Appl. Phys., 31 (8), 2588-2591 (1992).
doi:10.1143/JJAP.31.2588
1991
2 T. Shirafuji, M. Yoshimoto, T. Fuyuki and H. Matsunami: Low-hydrogen-concentration a-Si:H deposited by direct photo-CVD, Solar Energy Mater., 23, 256-264 (1991).
DOI:10.1016/0165-1633(91)90128-8
1 T. Shirafuji, M. Yoshimoto, T. Fuyuki and H. Matsunami: Low density of gap states in a-Si:H deposited by vacuum UV direct photochemical vapor deposition method, Jpn. J. Appl. Phys., 30 (4A), L538-L540 (1991).
doi:10.1143/JJAP.30.L538
1990
1 H. Matsunami, T. Shirafuji, T. Fuyuki and M. Yoshimoto: a-Si:H deposited by direct photo-CVD using a microwave-excited Xe lamp, Mater. Res. Soc. Symp. Proc., 192, 505-510 (1990).